Author:
Wang Jianing,Chen Jieshi,Zhang Zhiyuan,Zhang Peilei,Yu Zhishui,Zhang Shuye
Abstract
Purpose
The purpose of this article is the effect of doping minor Ni on the microstructure evolution of a Sn-xNi (x = 0, 0.05 and 0.1 wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment. Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni3Sn4 phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn4 phase. After the reflow process and thermal aging of different joints, the growth behavior of interfacial layer was different due to the different mechanism of element diffusion of the two substrates. The PC Ni substrate mainly provided Ni atoms through grain boundary diffusion. The Ni3Sn4 phase of the Sn0.05Ni/PC Ni joint was finer, and the diffusion flux of Sn and Ni elements increased, so the Ni3Sn4 layer of this joint was the thickest. The SC Ni substrate mainly provided Ni atoms through the lattice diffusion. The Sn0.1Ni/SC Ni joint increases the number of Ni atoms at the interface due to the doping of 0.1Ni (wt.%) elements, so the joint had the thickest NiSn4 layer.
Design/methodology/approach
The effects of doping minor Ni on the microstructure evolution of an Sn-xNi (x = 0, 0.05 and 0.1 Wt.%)/Ni (Poly-crystal/Single-crystal abbreviated as PC Ni/SC Ni) solder joint during reflow and aging treatment was investigated in this study.
Findings
Results showed that the intermetallic compounds (IMCs) of the interfacial layer of Sn-xNi/PC Ni joints were Ni3Sn4 phase, while the IMCs of Sn-xNi/SC Ni joints were NiSn4 phase. After the reflow process and thermal aging of different joints, the growth behavior of the interfacial layer was different due to the different mechanisms of element diffusion of the two substrates.
Originality/value
In this study, the effect of doping Ni on the growth and formation mechanism of IMCs of the Sn-xNi/Ni (single-crystal) solder joints (x = 0, 0.05 and 0.1 Wt.%) was investigated.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science,Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Cited by
45 articles.
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