Author:
Muscato Orazio,Wagner Wolfgang,Di Stefano Vincenza
Abstract
Purpose
– The purpose of this paper is to deal with the self-heating of semiconductor nano-devices.
Design/methodology/approach
– Transport in silicon semiconductor devices can be described using the Drift-Diffusion model, and Direct Simulation Monte Carlo (MC) of the Boltzmann Transport Equation.
Findings
– A new estimator of the heat generation rate to be used in MC simulations has been found.
Originality/value
– The new estimator for the heat generation rate has better approximation properties due to reduced statistical fluctuations.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Reference28 articles.
1. Bufler, F.M.
,
Schenk, A.
and
Fichtner, W.
(2000), “Efficient Monte Carlo device modeling”, IEEE Trans. Electr. dev, Vol. 47 No. 10, pp. 1891-1897.
2. Carrillo, J.A.
,
Gamba, I.M.
,
Majorana, A.
and
Shu, C.-W.
(2006), “2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods”, J. Comp. Phys, Vol. 214 No. 1, pp. 55-80.
3. Di Stefano, V.
and
Muscato, O.
(2012), “Seebeck effect in silicon semiconductors”, Acta Appl. Math, Vol. 122 No. 1, pp. 225-238.
4. Jacoboni, C.
and
Reggiani, L.
(1983), “The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials”, Rev. Mod. Phys, Vol. 55 No. 3, pp. 645-705.
5. Ju, Y.S.
and
Goodson, K.E.
(1999), “Phonon scattering in silicon films with thickness of order 100nm”, Appl. Phys. Lett, Vol. 74 No. 20, pp. 3005-3007.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献