Simulation of silicon semiconductor devices by means of a direct Boltzmann‐Poisson solver
Author:
Publisher
Emerald
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Reference12 articles.
1. A WENO-solver for the transients of Boltzmann–Poisson system for semiconductor devices: performance and comparisons with Monte Carlo methods
2. A Direct Solver for 2D Non-Stationary Boltzmann-Poisson Systems for Semiconductor Devices: A MESFET Simulation by WENO-Boltzmann Schemes
3. Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
4. Transport and Deformation-Potential Theory for Many-Valley Semiconductors with Anisotropic Scattering
5. The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors;Journal of Computational Physics;2010-11
2. ELECTRON TRANSPORT IN SILICON QUANTUM WIRE DEVICES;International Journal of Nanoscience;2009-12
3. Simulation of non-equilibrium electron transport in silicon quantum wires;Journal of Computational Electronics;2008-03-19
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