Physical models in device simulation of SI power pin‐diodes for optimal fitting of simulation results to measured data

Abstract

Shows how a sensitivity analysis of different mobility models was carried out in order to reach the best fit of simulation results to measured data. Simulated data were compared to both electrical (IV‐characteristics) and optical (excess charge carrier distribution) results. The simulations included both steady state and transient investigations on a temperature scale ranging from room temperature up to 150°C. Concerning lifetimes, a two‐trap Shockley‐Read‐Hall (SRH) recombination model was implemented into the simulation code to be able to model the local lifetime variations of the irradiated samples. At high carrier concentration, the overall dominating recombination process is the Auger process. From experimental data the Auger coefficients seem to be concentration dependent too, and in addition, proposes a temperature dependence to the Auger coefficient.