Author:
El Bitar R.,Salloum G.,Nsouli B.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. A model for gate oxide wear out based on electron capture by localized states
2. El Bitar, R., Salame, C. and Mialhe, P. (2007), “Hot carrier injection in VDMOSFET for improvement of commutation process”,Microelectronics International, Vol. 24 No. 60.
3. Characterization of interface degradation in deep submicron MOSFETs by gate-controlled-diode measurement
4. McPherson, J.W. and Mogul, H.C. (1998), “Disturbed bonding states in SiO2thin‐films and their impact on time‐dependent dielectric breakdown”,IEEE Proceedings of the International Reliability Physics Symposium, p. 47.
5. McPherson, J.W., Khamankar, R.B. and Shanware, A. (2000), “Complementary model for intrinsic time‐dependent dielectric breakdown in SiO2 dielectrics”,J. Appl. Phys. Lett., Vol. 88, p. 5351.
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献