Analytical modeling of quantization effects in surrounding-gate MOSFETs
Author:
Palanichamy Vimala,Balamurugan N.B.
Abstract
Purpose
– The purpose of this paper is to present an analytical model and simulation for cylindrical gate all around MOSFTEs including quantum effects.
Design/methodology/approach
– To incorporating the impact of quantum effects, the authors have used variational method for solving the Poisson and Schrodinger equations. The accuracy of the results obtained using this model is verified by comparing them with simulation results.
Findings
– This model is developed to provide an analytical expression for inversion charge distribution function for all regions of device operation. This expression is used to calculate the other important parameters like inversion charge centroid, threshold voltage, inversion charge, gate capacitance and drain current. The calculated expressions for the above parameters are simple and accurate. The validity of this model was checked for the devices with different dimensions and bias voltages.
Practical implications
– Simulation based on the compact physical models reduces the cost of developing a sophisticated fabrication technology and shortens the time-to-market. They may also be utilized to explore innovative device structures.
Originality/value
– This paper presents, for the first time, a compact quantum analytical model for cylindrical surrounding gate MOSFETs which predicts the device characteristics reasonably well over the entire range of device operation (above threshold as well as sub-threshold region).
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Reference15 articles.
1. Chen, Y.
and
Luo, J.
(2001), “A comparative study of double-gate and surrounding-gate MOSFETs in strong inversion and accumulation using an analytical model”, Technical Proceedings of the 2001 International Conference on Modeling and Simulation of Microsystems, University of California, Berkeley, CA, USA, Vol. 1, pp. 546-549. 2. Colinge, J.-P.
(2004), “Multiple-gate SOI MOSFETs”, Solid-State Electronics, Vol. 48, pp. 897-905. 3. He, J.
,
Liu, F.
,
Bia, W.
,
Feng, J.
,
Zhang, J.
and
Zhang, X.
(2007), “An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body”, Semiconductor Science and Technology, Vol. 22, pp. 671-677. 4. Iniguez, B.
,
Jimenez, D.
,
Roig, J.
,
Hamdy, A.
,
Lluis, H.
,
Marsal, F.
and
Pallares, J.
(2005), “Explict continuous model for long-channel undoped surrounding gate MOSFETs”, IEEE Transactions on Electron Devices, Vol. 44, pp. 1868-1873. 5. Jimenez, D.
and
Inguiez, B.
(2004), “Continuous analytic IV model for surrounding-gate MOSFETs”, IEEE Electron Device Letters, Vol. 25, pp. 571-573.
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