1. Andricacos, P.C.
,
Uzoh, C.
,
Dukovic, J.O.
,
Horkans, J.
and
Deligianni, H.
(1998), “Damascene copper electroplating for chip interconnections,” IBM Journal of Research and Development, Vol. 42 No. 5, pp. 567-574.
2. Beica, R.
,
Sharbono, C.
and
Ritzdorf, T.
(2008), “Through silicon via copper electrode position for 3D integration,” Electronic Components and Technology Conference, Lahe Buena Vista, FL, 9-11 April, pp. 577-583.
3. Bozzini, B.
,
D’rzo, L.
,
Romanello, V.
and
Mele, C.
(2006), “Electrodeposition of Cu from acidic sulfate solutions in the presence of bis-(3-sulfopropyl)-disulfide (SPS) and chloride ions,” Journal of The Electrochemical Society, Vol. 153 No. 4, pp. C254-C257.
4. Cao, Y.
,
Taephaisitphongse, P.
,
Chalupa, R.
and
West, A.C.
(2001), “Three-additive model of superfilling of copper,” Journal of The Electrochemical Society, Vol. 148 No. 7, pp. C466-C472.
5. Chen, C.H.
,
Lu, C.W.
,
Huang, S.M.
and
Dow, W.P.
(2011), “Effects of supporting electrolytes on copper electroplating for filling through-hole,” Electrochimica Acta, Vol. 56 No. 17, pp. 5954-5960.