Author:
Kelsall R.W.,O'Neill A.G.
Abstract
A 2‐dimensional multilayer MOSFET simulator has been developed, based on self‐consistently coupled ensemble Monte Carlo and Finite Element Poisson Solver algorithms. The simulator is used to investigate electron transport in 0.1µm delta‐doped n‐channel MOSFETs. The simulations demonstrate a buried channel mode of operation in these devices, whereby conduction occurs primarily along the delta‐doped layer. In this mode, the electron density at the Si/SiO2 interface is significantly reduced, implying corresponding reductions in interface scattering and hot electron degradation.
Subject
Applied Mathematics,Electrical and Electronic Engineering,Computational Theory and Mathematics,Computer Science Applications
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A fractional-order equivalent model for characterizing the interelectrode capacitance of MOSFETs;COMPEL - The international journal for computation and mathematics in electrical and electronic engineering;2022-03-24