Picosecond energy transfer in a transition metal dichalcogenide–graphene heterostructure revealed by transient Raman spectroscopy

Author:

Ferrante Carino1234ORCID,Di Battista Giorgio45ORCID,López Luis E. Parra5,Batignani Giovanni34,Lorchat Etienne5,Virga Alessandra34,Berciaud Stéphane5ORCID,Scopigno Tullio134

Affiliation:

1. Graphene Labs, Istituto Italiano di Tecnologia, I-16163 Genova, Italy

2. Innovative Nuclear Systems Laboratory, Fusion and Technology for Nuclear Safety and Security Department, “Italian National Agency for New Technologies, Energy and Sustainable Economic Development,” Casaccia, 00123 Roma, Italy

3. Center for Life Nano Science @Sapienza, Istituto Italiano di Tecnologia, I-00161 Roma, Italy

4. Dipartimento di Fisica, Università di Roma “La Sapienza,” 00185 Roma, Italy

5. Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Université de Strasbourg, CNRS, F-67000 Strasbourg, France

Abstract

Significance Hot carrier–based energy harvesting is critically implied in the performances of optoelectronic devices based on van der Waals heterostructures composed by graphene (Gr) and monolayer transition metal dichalcogenides (TMD). The way electron–hole couples initially photogenerated in the TMD are converted into an electric current in Gr is a controversial issue. In this work we identify the interlayer interaction occurring during the first picoseconds following photoexcitation as an energy transfer process that is much faster than (other) photogating phenomena implied in optoelectronic applications.

Publisher

Proceedings of the National Academy of Sciences

Subject

Multidisciplinary

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