The Crystal Structure of beta-Si3N4.
Author:
Publisher
Danish Chemical Society
Subject
General Chemical Engineering
Cited by 108 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanical Properties and Electronic Structures of M (M=Ti, V, Cr, Mn and Fe) Doped β-Si3N4 from First-Principle;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2024-06
2. Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride;Applied Surface Science;2024-05
3. Bandgap control and optical properties of β-Si3N4 by single- and co-doping from a first-principles simulation;International Journal of Modern Physics B;2018-06-05
4. Investigation of electronic structures and optical properties of β-Si3N4 doped with IV A elements: A first-principles simulation;AIP Advances;2018-04
5. Better band gaps for wide-gap semiconductors from a locally corrected exchange-correlation potential that nearly eliminates self-interaction errors;Journal of Physics: Condensed Matter;2017-09-08
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