HREM image simulation of a twin intersection in CVD diamond

Abstract

Chemically vapor deposited diamond was grown on a molybdenum substrate. A high density of twins (∑=3) and twin intersections were found in die diamond film. The twin intersections in silicon may result in the formation of a hexagonal phase in the region of intersection. Hexagonal diamond has previously been reported in high pressure experiments and in some meteorites. Here we present a type of intersection which is very common in CVD diamond as well as in other materials with the diamond, or the zincblende, structure grown epitaxially on various substrates. In this type of intersection the two twins do not cross each other; rather, one twin (T1) stops the propagation of another twin (T2).