A correlation of capacitive RF-MEMS reliability to AlN dielectric film spontaneous polarization

Author:

Papandreou Eleni,Papaioannou George,Lisec Tomas

Abstract

This paper investigates the effect of spontaneous polarization of magnetron-sputtered aluminum nitride on the electrical properties and reliability of Radio Frequency – Micro-Electro-Mechanical Systems capacitive switches. The assessment is performed with the aid of application of thermally stimulated polarization currents in metal-insulator-metal capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than that expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.

Publisher

Cambridge University Press (CUP)

Subject

Electrical and Electronic Engineering

Reference25 articles.

1. Temperature dependence of the pyroelectric coefficient and the spontaneous polarization of AlN

2. Analytical Model of the DC Actuation of Electrostatic MEMS Devices With Distributed Dielectric Charging and Nonplanar Electrodes

3. [10] Papaioannou G. ; Lisec T. : Dielectric charging process in AlN RF-MEMS capacitive switches, in Eur. Mictowave Week 1st EiMIC Symp. October 07, 540–3.

4. [11] Rottenberg X. ; Nauwelaers B. ; De Raedt W. ; Tilmans H.A.C. : Distributed dielectric charging and its impact on RF MEMS devices, in Eur. Mictowave Week 12th GAAS Symp. October 04, 475–8.

5. Effect of substrate composition on the piezoelectric response of reactively sputtered AlN thin films

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3