Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N-Reference-Cited by-同舟云学术

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Atom Probe Tomography Quantification of Alloy Fluctuations in (Al,In,Ga)N

Published:2017-07 Issue:S1 Volume:23 Page:716-717
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:Microsc Microanal

Author:

Bonef Bastien,Laurent Matthew,Keller Stacia,Mishra Umesh K.

Publisher

Cambridge University Press (CUP)

Subject

Instrumentation

Reference7 articles.

1. Bonef B. & Laurent M. contributed equally to this work.

2. Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography

3. Extraction of net interfacial polarization charge from Al0.54In0.12Ga0.34N/GaN high electron mobility transistors grown by metalorganic chemical vapor deposition

4. Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Analysis of Surface Morphology and Growth Mode of AlInGaN Films;physica status solidi (a);2018-09-26

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