An Observation and Hypothesis for Gate Leakage Mechanism in FinFET Transistor Semiconductor Device from Dies near Wafer Extreme Edge
Author:
Publisher
Cambridge University Press (CUP)
Subject
Instrumentation
Reference5 articles.
1. Investigation of TiAlC by Atomic Layer Deposition as N Type Work Function Metal for FinFET
2. An Application of High-Resolution Dual-Lens Dark-Field Electron Holography in Strain Analysis for Nanometer Semiconductor Device in Wafer-foundries
3. High quality interfacial layer formation for Si0.75Ge0.25 (100) high-k metal gate stack
4. [5] Thanks to Globalfoundries Fab8 PFA TEM-prep teams, Irene Brooks and Frieder Baumann for proof-reading, and Management and Legal teams for supporting the publication clearance.
5. Measurement of SiGe composition in 3-D semiconductor Fin Field Effect Transistor devices
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