Author:
Xiang Jinjuan,Li Tingting,Zhang Yanbo,Wang Xiaolei,Gao Jianfeng,Cui Hushan,Yin Huaxiang,Li Junfeng,Wang Wenwu,Ding Yuqiang,Xu Chongying,Zhao Chao
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference20 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High dielectric constant gate oxides for metal oxide Si transistors
3. Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces
4. Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
5. Mistry K. Allen C. Auth C. Beattie B. Bergstrom D. Bost M. Brazier M. Buehler M. Cappellani A. Chau R. Choi C. H. Ding G. Fischer K. Ghani T. Grover R. Han W. Hanken D. Hattendorf M. He J. Hicks J. Huessner R. Ingerly D. Jain P. James R. Jong L. Joshi S. Kenyon C. Kuhn K. Lee K. Liu H. Maiz J. McIntyre B. Moon P. Neirynck J. Pae S. Parker C. Parsons D. Prasad C. Pipes L. Prince M. Ranade P. Reynolds T. Sandford J. Shifren L. Sebastian J. Seiple J. Simon D. Sivakumar S. Smith P. Thomas C. Troeger T. Vandervoorn P. Williams S. Zawadzki K. , presented at the Electron Devices Meeting, 2007. IEDM 2007. IEEE International, 2007 (unpublished).
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