A drift-diffusion model for semiconductors with temperature effects-Reference-Cited by-同舟云学术

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A drift-diffusion model for semiconductors with temperature effects

Published:2009-09-21 Issue:5 Volume:139 Page:1101-1119
ISSN:0308-2105
Container-title:Proceedings of the Royal Society of Edinburgh: Section A Mathematics
language:en
Short-container-title:Proceedings of the Royal Society of Edinburgh: Section A Mathematics

Author:

Xu Xiangsheng

Abstract

We establish an existence theorem for a stationary semiconductor model which takes into account the current generated by the gradient of the temperature.

Publisher

Cambridge University Press (CUP)

Subject

General Mathematics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of a p-i-n Diode Circuit at Radio Frequency Using an Electromagnetic-Physics-Based Simulation Method;Electronics;2023-03-23

2. Global existence analysis for degenerate energy-transport models for semiconductors;Journal of Differential Equations;2015-04

3. Existence analysis for a simplified transient energy-transport model for semiconductors;Mathematical Methods in the Applied Sciences;2012-11-29

4. Analysis of Temperature Effect on p-i-n Diode Circuits by a Multiphysics and Circuit Cosimulation Algorithm;IEEE Transactions on Electron Devices;2012-11

5. Boundedness of solutions to a time-dependent semiconductor model;Journal of Mathematical Analysis and Applications;2010-11

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