A 120 GHz FMCW radar frontend demonstrator based on a SiGe chipset-Reference-Cited by-同舟云学术

A 120 GHz FMCW radar frontend demonstrator based on a SiGe chipset

Published:2012-04-19 Issue:3 Volume:4 Page:309-315
ISSN:1759-0787
Container-title:International Journal of Microwave and Wireless Technologies
language:en
Short-container-title:Int. J. Microw. Wireless Technol.

Author:

Jahn Martin,Stelzer Andreas

Abstract

This paper presents a frequency-modulated continuous-wave (FMCW) radar operating at 120 GHz, which features silicon–germanium (SiGe) chips that employ HBTs with 320 GHz fmax. The chipset comprises a fundamental-wave signal-generation chip with a voltage-controlled oscillator (VCO) that provides frequencies between 114 and 130 GHz and a corresponding dual–transceiver (TRX) chip that supports monostatic and quasi-monostatic radar configurations. The cascode amplifiers used in the TRX chip were characterized in separate test chips and yielded peak small-signal gains of approximately 15 dB. Finally, a quasi-monostatic two-channel FMCW radar frontend with on-board differential microstrip antennas was built on an RF substrate. FMCW radar measurements with frequency chirps from 116 to 123 GHz verified the functionality of the designed radar sensor.

Publisher

Cambridge University Press (CUP)

Subject

Electrical and Electronic Engineering

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