Author:
Piotrowicz Stéphane,Morvan Erwan,Aubry Raphaël,Callet Guillaume,Chartier Eric,Dua Christian,Dufraisse Jérémy,Floriot Didier,Jacquet Jean-Claude,Jardel Olivier,Mancuso Yves,Mallet-Guy Benoit,Oualli Mourad,Ouarch Zineb,Di-Forte Poisson Marie-Antoinette,Sarazin Nicolas,Stanislawiak Michel,Delage Sylvain
Abstract
The present paper presents an overview of the AlGaN/GaN-based circuits realized over the years. Two technological processes with 0.25 and 0.7 μm gate length allowed one to address applications from L- to Ku-bands. Depending on the process development and frequency of the operation, results on hybrid or MMIC technology are presented. GaN technology is evaluated through the realization of high-power amplifiers, robust low-noise amplifiers, or power switches to prepare the next generation of Tx-Rx modules.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering