X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling-Reference-Cited by-同舟云学术

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X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

Published:2008-10 Issue: Volume: Page:
ISSN:1550-8781
Container-title:2008 IEEE Compound Semiconductor Integrated Circuits Symposium
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Author:

Janssen J. P. B.,van Heijningen M.,Provenzano G.,Visser G. C.,Morvan E.,van Vliet F. E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4674454/4674455/04674478.pdf?arnumber=4674478

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications;International Journal of Circuit Theory and Applications;2024-01-27

2. A Compact 7-10 GHz GaN Low Noise Amplifier MMIC with Sub 0.3 dB Gain flatness;2023 IEEE 15th International Conference on ASIC (ASICON);2023-10-24

3. X-Band High Power GaN SPDT Switch MMIC for Space based Radar Front End;2023 IEEE Wireless Antenna and Microwave Symposium (WAMS);2023-06-07

4. X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology;Sensors;2023-05-17

5. Design ofGaN‐basedX‐band LNAsto achieve sub‐1.2 dBnoise figure;International Journal of RF and Microwave Computer-Aided Engineering;2022-09-06

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