Evaluating the Performance of a Commercial Silicon Drift Detector for X-ray Microanalysis

Abstract

The development of large-area silicon drift detectors (SDDs) provides a significant improvement in X-ray micro-analysis, especially in scanning electron microscopes (SEMs) and electron microprobes, where high incident probe currents are possible. The resultant improved detection limits and/or speed of elemental mapping and analysis make the SDD the detector of choice for microanalysis. With the larger geometric collection efficiency and faster response times of these detectors, the higher input count rates can place significant demands on the performance and speed of the signal processing electronics.