Author:
Chen L.J.,Cheng S.L.,Yu C.H.,Su P.Y.,Lin H.H.,Chi K.S.
Abstract
The structural evolution in amorphous silicon and germanium
thin films has been investigated by high-resolution transmission
electron microscopy (HRTEM) in conjunction with autocorrelation
function (ACF) analysis. The results established that the structure
of as-deposited semiconductor films is of a high density of
nanocrystallites embedded in the amorphous matrix. In addition,
from ACF analysis, the structure of a-Ge is more ordered than
that of a-Si. The density of embedded nanocrystallites in amorphous
films was found to diminish with annealing temperature first,
then to increase. The conclusions also corroborate well with
the results of diminished medium-range order in annealed amorphous
films determined previously by a variable coherence microscopy
method.
Publisher
Cambridge University Press (CUP)
Cited by
8 articles.
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