1. V. A. Varavin, S. A. Dvoretskii, D. G. Ikusov, et al., “HgCdTe Structures for Dual-Band Protodetectors Operating in the 3–5 and 8–12 μm Spectral Ranges,” Avtometriya 49(5), 68–77 (2013) [Optoelectron., Instrum. Data Process. 49 (5), 476–484 (2013)].
2. A. V. Predein, Yu. G. Sidorov, I. V. Sabinina, et al., “High-Performance 320 × 256 Long-Wavelength Infrared Photodetector Arrays Based on CdHgTe Layers Grown by Molecular Beam Epitaxy,” Avtometriya 49(5), 78–85 (2013) [Optoelectron., Instrum. Data Process. 49 (5), 485–491 (2013)].
3. J. W. Matthews, A. E. Blakeslee, and S. Mader, “Use of Misfit Strain to Remove Dislocations from Epitaxial Thin Films,” Thin Solid Films 33(1–2), 253–266 (1976).
4. S. I. Chikichev, “CdxHg1−x Te/ … /Si Heterostructures: Yesterday, Today, and Tomorrow,” Avtometriya, No. 4, 6–31 (1996).
5. M. A. Berding, W. D. Nix, D. R. Rhiger, et al., “Critical Thickness in the HgCdTe/CdZnTe System,” J. Electron. Mater. 29(6), 676–679 (2000).