Author:
Dvoretsky S.A.,Mikhailov N.N.,Ikusov D.G.,Kartashev V.A.,Kolesnikov A.V.,Sabinina I.V.,G. Sidorov Yu.,Shvets V.A.
Reference15 articles.
1. Varavin VS, Vasiliev VV, Dvoretsky SA, Mikhailov NN, Ovsyuk VN, Sidorov YG, et al. HgCdTe epilayers on GaAs: Growth and devices. Opto-Electronics Review. 2003;11(2):99-111
2. Koike K, Tanaka N, Li S, Yano M. High-quality CdTe growth in the (100)-orientation on (100)-GaAs substrates by molecular beam epitaxy. Journal of Crystal Growth. 2001;227-228:671-676
3. Ari O, Polat M, Karakaya M, Selamet Y. Growth and characterization of CdTe absorbers on GaAs by MBE for high concentration PV solar cella. Physica Status Solidi C. 2015;12:1211-1214. DOI: 10.1002/pssc201510068
4. Faurie JP, Million A. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe. Journal of Crystal Growth. 1981;54(3):582-585. DOI: 10.1016/0022-0238(81)90515-9
5. Daudin B, Cunff DB, Tatarenko S. Stoichiometry determination of the Te-rich (100)CdTe and (100)ZnTe surfaces. Surface science. 1996;352-354:99-104
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