Author:
Savel’kaev S. V.,Litovchenko V. A.,Zarzhetskaya N. V.
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Reference10 articles.
1. S. R. Mazumder and P. D. Van der Puije, “Two-Signal Method of Measuring the Large-Signal S-Parameters of Transistors,” IEEE Trans. Microwave Theory and Techn. MTT-26(6), 417–420 (1978).
2. S. H. Li and R. G. Bosisio, “Automatic Analysis of Two-Port Active Microwave Network,” Electron. Lett. 18(24), 1033–1034 (1982).
3. S. V. Savel’kaev and S. V. Romas’ko, “Method of Measuring the S-Parameters of Two-Port Networks in Microstrip Lines,” Vestn. SGUGiT 22(2), 260–270 (2017).
4. S. V. Savel’kaev and S. V. Romas’ko, “A Method of Measuring the S-Parameters of Transistors on a Simulator-Analyzer of Amplifiers and UNF Self-Excited Oscillators Metrologiya,” No. 2, 31–44 (2017) [Meas. Tech., No. 2, 612–619 (2017)].
5. S. V. Savel’kaev and V. A. Litovchenko, “Analysis and Synthesis of Methods for Measuring the S-Parameters of Microwave Transistors,” Metrologiya, No. 4, 51–63 (2018) [Meas. Tech. 61 (12), 1223–1227 (2019).
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling the Impact of AlGaAs Heterostructure Barrier Layer Thickness on Microwave Characteristics of Transistors Based on 0.15 μm pHEMT LNA Technology;2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM);2024-06-28
2. Design of 200W Double Biased GaN Power Amplifier Based on X Parameter;2024 6th International Conference on Communications, Information System and Computer Engineering (CISCE);2024-05-10