Modeling the Impact of AlGaAs Heterostructure Barrier Layer Thickness on Microwave Characteristics of Transistors Based on 0.15 μm pHEMT LNA Technology-Reference-Cited by-同舟云学术

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Modeling the Impact of AlGaAs Heterostructure Barrier Layer Thickness on Microwave Characteristics of Transistors Based on 0.15 μm pHEMT LNA Technology

Published:2024-06-28 Issue: Volume: Page:80-83
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Container-title:2024 IEEE 25th International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Shesterikov Alexandr E.¹,Shesterikova Darya A.¹,Erofeev Evgeniy V.²

Affiliation:

1. Tomsk State University of Control Systems and Radioelectronics,“Microelectronics” AO «NPF «Micran»,Development Department of NPC,Tomsk,Russia

2. Tomsk State University of Control Systems and Radioelectronics, Institute of Atmospheric Optics V.E. Zuev SB RAS,“Microelectronics” AO «NPF «Micran»,Development Department of NPC,Tomsk,Russia

Funder

Ministry of Science and Higher Education of the Russian Federation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10614947/10614948/10614964.pdf?arnumber=10614964

Reference14 articles.

1. Space Mapping Approach to Electromagnetic Centric Multiphysics Parametric Modeling of Microwave Components

2. RF and Microwave Circuits, Measurements, and Modeling

3. An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

4. Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

5. Recent progress of heterostructures based on two dimensional materials and wide bandgap semiconductors

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