Features of Optical Transitions in GeSiSn/Si Multiple Quantum Wells
Author:
Publisher
Allerton Press
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation
Link
https://link.springer.com/content/pdf/10.3103/S8756699022060127.pdf
Reference20 articles.
1. A. I. Yakimov, ‘‘Ge/Si heterostructures with Ge quantum dots for mid-infrared photodetectors,’’ Optoelectron., Instrum. Data Process. 49, 467–475 (2013). https://doi.org/10.3103/S8756699013050075
2. T. R. Harris, M.-Yi Ryu, Yu. K. Yeo, B. Wang, C. L. Senaratne, and J. Kouvetakis, ‘‘Direct bandgap cross-over point of Ge$${}_{1-y}$$Sn$${}_{y}$$ grown on Si estimated through temperature dependent photoluminescence studies,’’ J. Appl. Phys. 120, 085706 (2016). https://doi.org/10.1063/1.4961464
3. O. Moutanabbir, S. Assali, X. Gong, E. O’Reilly, C. A. Broderick, B. Marzban, J. Witzens, W. Du, S-Q. Yu, A. Chelnokov, D. Buca, and D. Nam, ‘‘Monolithic infrared silicon photonics: The rise of (Si)GeSn semiconductors,’’ Appl. Phys. Lett. 118, 110502 (2021). https://doi.org/10.1063/5.0043511
4. H.-S. Lan, S. T. Chang, and C. W. Liu, ‘‘Semiconductor, topological semimetal, indirect semimetal, and topological Dirac semimetal phases of Ge$${}_{1-x}$$Sn$${}_{x}$$ alloys,’’ Phys. Rev. B 95, 201201(R) (2017). https://doi.org/10.1103/PhysRevB.95.201201
5. Sh. Su, B. Cheng, Ch. Xue, W. Wang, Q. Cao, H. Xue, W. Hu, G. Zhang, Yu. Zuo, and Q. Wang, ‘‘GeSn $$p$$-$$i$$-$$n$$ photodetector for all telecommunication bands detection,’’ Opt. Express 19, 6400–6405 (2011). https://doi.org/10.1364/OE.19.006400
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