Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies-Reference-Cited by-同舟云学术

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Direct bandgap cross-over point of Ge1-ySny grown on Si estimated through temperature-dependent photoluminescence studies

Published:2016-08-28 Issue:8 Volume:120 Page:085706
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Harris Thomas R.¹,Ryu Mee-Yi²,Yeo Yung Kee¹,Wang Buguo¹,Senaratne C. L.³,Kouvetakis John³

Affiliation:

1. Department of Engineering Physics, Air Force Institute of Technology, Wright-Patterson AFB, Ohio 45433, USA

2. Department of Physics, Kangwon National University, Chuncheon 200-701, South Korea

3. School of Molecular Science, Arizona State University, Tempe, Arizona 85287, USA

Funder

National Research Foundation of Korea (NRF)

Air Force Office of Scientific Research (AFOSR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4961464

Reference24 articles.

1. Near-Infrared Sub-Bandgap All-Silicon Photodetectors: A Review

2. Silicon optical modulators

3. Silicon waveguided components for the long-wave infrared region

4. Achieving direct band gap in germanium through integration of Sn alloying and external strain

5. Compositional dependence of the bowing parameter for the direct and indirect band gaps in Ge1−ySny alloys

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1. Optical and electronic properties of Ge1−xSnx/Si alloys grown by remote plasma-enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B;2024-08-30

2. X-ray photoelectron spectroscopy surface oxidation study of remote plasma-enhanced chemical vapor deposition-grown Ge1−xSnx/Si alloys;Journal of Vacuum Science & Technology B;2024-07-01

3. Effects of high-temperature annealing on vacancy complexes and luminescence properties in multilayer periodic structures with elastically strained GeSiSn layers;Journal of Vacuum Science & Technology B;2024-04-17

4. Variation in thermal stability of Ge1−xSnx films for infrared device applications;Journal of Vacuum Science & Technology A;2023-07-10

5. Progress in group-IV semiconductor nanowires based photonic devices;Applied Physics A;2023-02-25

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