1. Staebler, D.L. and Wronski, C.R., Reversible conductivity changes in discharge-produced amorphous Si, Appl. Phys. Lett., 1977, vol. 31, pp. 292–294.
2. Stutzmann, M., Metastability in amorphous and microcrystalline semiconductors, in Amorphous and Microcrystalline Semiconductor Devices: Materials and Device Physics, Kanicki, J., Ed., Norwood, MA: Artech House, 1992, pp. 129–187.
3. Kolodziej, A., Krewniak, P., and Nowak, S., Technology of the thin silicon solar cells, Report for the State Committee for Scientific Research on realization of the Goal Orientated Research, Project No. PBZ KBN 05/T11/98, Krakow: AGH, 2003.
4. Kolodziej, A., Staebler-Wronski effect in amorphous silicon and its alloys, Opto-Electron. Rev., 2004, vol. 12, no. 1, pp. 21–32.
5. Wronski, R., Pearce, J.M., Koval, R.J., et al., Light induced defect creation kinetics in thin film protocrystalline silicon materials and their solar cells, Mater. Res. Soc. Symp. Proc., 2002, vol. 715, pp. A.13.4.1–A.13.4.12.