Formation of defects on the surface of LiF crystals under irradiation with different ions mass-Reference-Cited by-同舟云学术

Formation of defects on the surface of LiF crystals under irradiation with different ions mass

Published:2022-10-19 Issue: Volume: Page:1-14
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Sharopov Utkirjon¹^ORCID,Gopparov Umid¹,Rashidov Karim¹,Kaur Kulwinder²,Kurbanov Muzaffar³,Juraev Turob⁴,Egamberdiev Bahrom⁵,Kakhramonov Alisher⁵,Turopova Sitora⁵,Saidov Dilmurod⁶,Sanat Boltayev⁷

Affiliation:

1. Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan

2. Department of Physics, Mehar Chand Mahajan, DAV College for Women, Chandigarh, India

3. Department of Physics, Urgench State University, Urgench, Uzbekistan

4. Department of Heliophysics and Renewable Energy Sources, Bukhara State University, Bukhara, Uzbekistan

5. Department of Condensed Matter Physics, Research Institute of Semiconductor Physics and Microelectronics at the National University named after Mirzo Ulugbek, Tashkent, Uzbekistan

6. Department of Natural sciences, Urgench branch of the Tashkent University of Information Technologies, Urgench, Uzbekistan

7. Bukhara branch of the Tashkent Institute of Irrigation and Agricultural Mechanization Engineers, Bukhara, Uzbekistan

Funder

Ministry of Innovation of Uzbekistan

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2022.2133716

Reference62 articles.

1. Defect-engineered two-dimensional layered gallium sulphide molecular gas sensors with ultrahigh selectivity and sensitivity

2. Low Energy Ar⁺ Ion Scattering on InGaP(001) Surface

3. The Influence of the Spatial Orientation of ZnO Nanorods on the Luminescence Spectrum

4. Optoelectronic properties exploration of native point defects on GaN nanowires

5. Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices

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