Theoretical analysis of the radiation effect on the transient behavior of optoelectronic integrated devices
Author:
Affiliation:
1. a Radiation Engineering Department , National Center for Radiation Research and Technology, Atomic Energy Authority , Egypt
2. b Electrical Engineering Department, Faculty of Engineering , Azhar University , Egypt
Publisher
Informa UK Limited
Subject
Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation
Link
https://www.tandfonline.com/doi/pdf/10.1080/10420150410001670297
Reference8 articles.
1. Light-to-light transducers with amplification
2. Vertical and direct integration of heterojunction phototransistors and laser diodes
3. A new optoelectronic integrated device for light-amplifying optical switch (LAOS)
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