Solid-state microwave switches: Circuitry, manufacturing technologies and development trends. Review (Part 2)
Author:
Publisher
Allerton Press
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/content/pdf/10.3103/S0735272713050014.pdf
Reference43 articles.
1. M. Hieda, K. Nakahara, H. Kurusu, Y. Iyama, S. Urasaki, “High-isolation series-shunt FET SPDT switch with a capacitor canceling FET parasitic inductance,” IEEE Trans. Microwave Theory Tech. 49, No. 12, 2453 (Dec. 2001).
2. J. A. Torres, J. C. Freire, “Monolithic transistors SPST switch for L-band,” IEEE Trans. Microwave Theory Tech. 50, No. 1, 51 (Jan. 2002).
3. Z.-M. Tsai, Y.-S. Jiang, J. Lee, K.-Y. Lin, H. Wang, “Analysis and design of bandpass single-pole-double-throw FET filter-integrated switches,” IEEE Trans. Microwave Theory Tech. 55, No. 8, 1601 (Aug. 2007).
4. J. Lee, R.-B. Lai, C.-C. Chen, C.-S. Lin, K.-Y. Lin, C.-C. Chiong, H. Wang, “Low insertion-loss single-pole-double-throw reduced-size quarter-wavelength HEMT bandpass filter integrated switches,” IEEE Trans. Microwave Theory Tech. 56, No. 12, 3028 (Dec. 2008).
5. Y. Jin, C. Nguyen, “Ultra-compact high-linearity high-power fully integrated DC-20-GHz 0.18-um CMOS T/R switch,” IEEE Trans. Microwave Theory Tech. 55, No. 1, 30 (Jan. 2007).
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