Enhanced Static Noise Margin and Increased Stability SRAM Cell with Emerging Device Memristor at 45-nm Technology

Author:

Singh Shalini,Mishra Vishwas

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering

Reference13 articles.

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2. S. Borkar, T. Karnik, S. Narendra, J. Tschanz, A. Keshavarzi, V. De, “Parameter variations and impact on circuits and microarchitecture,” Proc. of 40th Annual Design Automation Conf., 2–6 Jun. 2003, Anaheim, CA, USA (ACM, 2006), pp. 338–342. DOI: 10.1145/775832.775920.

3. T. Karnik, V. De, S. Borkar, “Statistical design for variation tolerance: key to continued Moore’s law,” Proc. of Int. Conf. on Integrated Circuit Design and Technology, 17–20 May 2004, Austin, TX, USA (IEEE, 2004), pp. 175–176. DOI: 10.1109/ICICDT.2004.1309939.

4. S. Doyle, S. Ramaswamy, T. Hoang, L. Rockett, T. Grembowski, A. Bumgarner, “High performance radiation hardened static random access memory (SRAM) design for space applications,” Proc. of IEEE Aerospace Conf., 6–13 Mar. 2004, Big Sky, MT, USA (IEEE, 2004), pp. 2284–2293. DOI: 10.1109/AERO.2004.1368022.

5. L. Chua, “Memristor-The missing circuit element,“ IEEE Trans. Circuit Syst. 18, No. 5, 507 (1971). DOI: 10.1109/TCT.1971.1083337.

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