Accurate modeling of nanoscale gate underlap SOI MOSFET and design of low noise amplifier for RF applications
Author:
Publisher
Allerton Press
Subject
Electrical and Electronic Engineering
Link
http://link.springer.com/content/pdf/10.3103/S0735272713060010.pdf
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2. Steve H. Jen, Christian Enz, David R. Pehlke, Michael Schröter, Bing J. Sheu, “A high-frequency MOS transistor model and its effects on radio-frequency circuits,” Analog Integr. Circ. Signal Process. 23, 93 (May 2000). doi: 10.1023/A:1008399824651.
3. In Man Kang, “Non-quasi-static RF model for SOI FinFET and its verification,” J. Semiconductor Technol. Sci. 10,No. 2, 160 (June 2010).
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1. Design and Performance Analysis of Partially Depleted and Fully Depleted Silicon on Insulator MOSFET;Journal of Physics: Conference Series;2022-09-01
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