Application of surface charge lithography to nanostructuring of GaN epilayers
Author:
Publisher
Allerton Press
Subject
Industrial and Manufacturing Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces
Link
http://link.springer.com/content/pdf/10.3103/S106837550801002X.pdf
Reference6 articles.
1. Tiginyanu, I.M. et al., Surface-Charge Lithography for GaN Microstructuring Based on Photoelectrochemical Etching Techniques, Appl. Phys. Lett., 2005, vol. 86, pp. 174102–174105.
2. Youtsey, C. et al., Rapid Evaluation of Dislocation Densities in n-Type GaN Films Using Photoenhanced Wet Etching, Appl. Phys. Lett., 1999, vol. 74, pp. 3537–3539.
3. Weyher, J.L. et al., Selective Photoetching and Transmission Electron Microscopy Studies of Defects in Heteroepitaxial GaN, J. Appl. Phys., 2001, vol. 90, pp. 6105–6109.
4. Segev, D. and Van de Walle, C.G., Origins of Fermi-Level Pinning on GaN and InN Polar and Nonpolar Surfaces, Europhys. Lett., 2006, vol. 76, pp. 305–311.
5. Kočan, M. et al., Surface Potential at as-Grown GaN(0001) MBE Layers, Phys. Status Solidi B, 2002, vol. 234, pp. 773–777.
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dewetting of copper nanolayers on silica in oxygen: towards preparation of copper meso/nanowires by self-organization;Nanotechnology;2009-10-22
2. Surface charge lithography for GaN micro- and nanostructuring;SPIE Proceedings;2009-02-12
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