1. Pasynkov, V.V. and Sorokin, V.S., Materialy elektronnoi tekhniki: uch. dlya stud. vuzov po spets. elektronnoi tekhniki (Materials of Electronic Engineering: A Textbook for University Students in the Specialty of Electronic Engineering), St. Petersburg: Lan’, 2001.
2. Dunaev, A.V., Pivovarenok, S.A., Semenova, O.A., et al., Kinetics and mechanisms of plasma-chemical etching of GaAs in chlorine and hydrogen chloride, Fiz. Khim. Obrab. Mater., 2010, no. 6, p. 42.
3. Dunaev, A.V., Pivovarenok, S.A., Efremov, A.M., and Svettsov, V.I., Spectral study of gallium arsenide etching in HCl plasma, Mikroelektronika, 2011, vol. 40, no. 6, p. 413.
4. Metzler, D., et al., Fluorocarbon assisted atomic layer etching of SiO2 and Si using cyclic Ar/C4F8 and Ar/CHF3 plasma, J. Vacuum Sci. Technol. A: Vacuum, Surf., Films, 2016, vol. 34, no. 1, p. 01B101.
5. Dunaev, A.V., Investigation of the GaAs surface after plasma etching of HCl/Ar, HCl/Cl2, and HCl/H2 mixtures by atomic force microscopy, Mikroelektronika, 2014, vol. 43, no. 1, p. 17.