Output buffer for +3.3 V applications in a 180 nm +1.8 V CMOS technology

Author:

Mahendranath B.,Srinivasulu AvireniORCID

Publisher

Allerton Press

Subject

Electrical and Electronic Engineering

Reference15 articles.

1. Yingyan Lin, Xuecheng Zou, Zhaoxiao Zheng, Wenjie Huo, Xiaofei Chen, Wenjing Kang, “High-speed, low switching noise and load adaptive output buffer,” Proc. of IEEE Int. Symp. on Integrated Circuits, ISIC, 14-16 Dec, 2009, Singapore (IEEE, 2009), pp. 280–282. URI: http://ieeexplore.ieee.org/document/5403888/.

2. R. S. Scott, N. A. Dumin, T. W. Hughes, D. J. Dumin, B. T. Moore, “Properties of high-voltage stress generated traps in thin silicon oxide,” IEEE Trans. Electron Devices 43, No. 7, 1133 (1996). DOI: 10.1109/16.502425.

3. B. Mahendranath, A. Srinivasulu, “Analysis of two new voltage level converters with various load conditions,” Int. J. Advances Telecommunications, Electrotechnics, Signals and Systems 2, No. 3, 92 (2013). URI: http://www.ijates.org/index.php/ijates/article/view/45.

4. A. Srinivasulu and M. Rajesh, “ULPD and CPTL pull-up stages for differential cascode voltage switch logic,” J. Engineering 2013, Article ID 595296, 5 pages (2013). DOI: 10.1155/2013/595296.

5. A. B. T. Sundari and Avireni Srinivasulu, “High speed level converters with short circuit current reduction,” Int. J. Advances in Telecommunications, Electrotechnics, Signals and Systems 3, No. 2, 44 (2014). DOI: 10.11601/ijates.v3i2.92.

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