Author:
Grigoriev Fedor,Sulimov Vladimir,Tikhonravov Alexander
Abstract
AbstractA brief review of the mathematical methods of thin-film growth simulation and results of their applications is presented. Both full-atomistic and multi-scale approaches that were used in the studies of thin-film deposition are considered. The results of the structural parameter simulation including density profiles, roughness, porosity, point defect concentration, and others are discussed. The application of the quantum level methods to the simulation of the thin-film electronic and optical properties is considered. Special attention is paid to the simulation of the silicon dioxide thin films.
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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