Synthesis and characterization of Zn doped AlSb thin films for photovoltaic and energy applications-Reference-Cited by-同舟云学术

Synthesis and characterization of Zn doped AlSb thin films for photovoltaic and energy applications

Published:2022-02-01 Issue:5 Volume:77 Page:507-513
ISSN:0932-0784
Container-title:Zeitschrift für Naturforschung A
language:en
Short-container-title:

Author:

Sattar Farhan¹,Shahid Wajeehah²,Anwar Abdul Waheed¹,Iqbal Muhammad Aamir³,Malik Maria⁴,Anwar Nadia²⁵,Idrees Faryal⁶,Zaheer Ud Din Syed⁷,Kanwal Qudsia⁸

Affiliation:

1. Department of Physics , University of Engineering and Technology Lahore , Lahore , Pakistan

2. Department of Physics , The University of Lahore , Lahore , Pakistan

3. School of Materials Science and Engineering , Zhejiang University , Hangzhou , 310027 , China

4. Centre of Excellence in Solid State Physics , University of the Punjab , Lahore , Pakistan

5. School of Materials Science and Engineering , Tsinghua University , Beijing , 100084 , China

6. Department of Physics , University of the Punjab , Lahore , Pakistan

7. International School of Optoelectronic Engineering , Qilu University of Technology (Shandong Academy of Sciences) , Jinan , 250353 , China

8. Department of Chemistry , The University of Lahore , Lahore , Pakistan

Abstract

Abstract Thin films of zinc doped aluminum antimonide (Zn:AlSb) have been dumped on glass substrate using chemical bath deposition method. The morphological, structural, as well as optical properties of deposited thin films are investigated using XRD, optical microscopy, and UV-V is spectroscopy along with four-point probe technique. The XRD results exhibit that Zn is doped in AlSb and maximum grain size has been obtained at 4% Zn-concentration. Optical micrographs of pure and zinc doped aluminum antimonide (AlSb) at different concentrations of Zn have been shown to confirm the doping by observing changes in morphology and it has been observed that optimized films of AlSb are obtained at 4% of Zn-content. The optical bandgap of Zn doped AlSb films at varying concentrations of 0%, 1%, 2%, 3% and 4% has been found to decrease with enhancement in Zn-concentration and values are measured as 1.8, 1.7, 1.6, 1.4, and 1.3 eV respectively. The sheet resistivity also depends on Zn-content and has been observed to decrease as AlSb is doped with Zn, indicating an increase in electrical conductivity. The explored results indicate a significant potential of these deposited thin films to be used in photonics, photocatalysis, and energy industry.

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

Link

https://www.degruyter.com/document/doi/10.1515/zna-2021-0335/pdf

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