Single-digit 6-nm multilevel patterns by electron beam grayscale lithography

Abstract

Abstract We report on the fabrication of very high-resolution discrete four-resist-level grayscale patterns in poly(methyl methacrylate) with just 6-nm step height and down to 32-nm step width using dose-modulated, grayscale electron beam lithography and a low-contrast resist-developer system. This direct pattern writing is important for replication in high-volume manufacturing of diffractive optics. An innovative concept of unexposed auxiliary spacers helped to enhance the discrete character of the multi-level patterns. For pattern step widths between 100 and 32 nm, a transformation toward blazed gratings with increasingly continuous-slope character was obtained. All high-resolution patterns were prepared in a single exposure and development process from an initially about 30-nm thin film. The pattern roughness due to a relatively large polymer molecular weight was reduced using selective thermal annealing with only minimally affecting the global pattern shape by reflow. The results will enable further approaches toward single-digit vertical and prospectively single-digit lateral resolution grayscale patterns.