Luminescence properties of novel red-emitting phosphor InNb1-xPxO4:Eu3+ for white light emitting-diodes

Abstract

Abstract InNb1-xPxO4:Eu3+ red phosphors were synthesized by solid-state reaction and their luminescence properties were also studied through photoluminescence spectra. The excitation and emission spectra make it clear that the as-prepared phosphors can be effectively excited by near-ultraviolet (UV) 394 nm light and blue 466 nm light to emit strong red light located at 612 nm, due to the Eu3+ transition of 5D0 → 7F2. The luminescence intensity is dependent on phosphorus content, and it achieves the maximum at x = 0.4. Excessive phosphorus in the phosphors can result in reduction of luminescence intensity owing to concentration quenching.With the increasing content of phosphorus, the phosphors are prone to emit pure red light. This shows that the InNb1.6P0.4O4:0.04Eu3+ phosphor may be a potential candidate as a red component for white light emitting-diodes.