Influence of Bi3+ content on photoluminescence of InNbO4:Eu3+,Bi3+ for white light-emitting diodes

Abstract

Abstract A series of red-emitting phosphors InNbO4:Eu3+,Bi3+ was prepared by a high temperature solid-state reaction. The structure, size distribution and luminescence properties of the phosphors were respectively characterized by X-ray diffraction (XRD), laser particle size and molecular fluorescence spectrometer. The XRD results indicate that the phase-pure samples have been obtained and the crystal structure of the host has not changed under the Eu3+ and Bi3+ co-doping. The test of size distribution shows that the phosphor has a normal size distribution. The excitation spectra illustrate that the dominant sharp peaks are located at 394 nm (7F0→5L6) and 466 nm (7F0→5D2). Meanwhile, the emission spectra reveal that the phosphors excited by the wavelength of 394 nm or 466 nm have an intense red-emission line at 612 nm owing to the 5D0→7F2 transition of Eu3+. Bi3+ doping has not changed the peak positions except the photoluminescence intensity. The emission intensity is related to Bi3+ concentration, and it is up to the maximum when the Bi3+-doping concentration is 4 mol%. Due to good photoluminescence properties of the phosphor, the InNbO4:0.04Eu3+,0.04Bi3+ may be used as a red component for white light-emitting diodes.