Total gain of InTlAsSb quantum dot structures-Reference-Cited by-同舟云学术

Total gain of InTlAsSb quantum dot structures

Published:2020-08-10 Issue:0 Volume:0 Page:
ISSN:2191-6322
Container-title:Journal of Optical Communications
language:en
Short-container-title:

Author:

Al-Shatravi Ali Gehad¹,Al-Nashy Baqer Obeid²,Al-Khursan Amin Habbeb³^ORCID

Affiliation:

1. Physics Department , Science College, Thi-Qar University , Nasiriyah , Iraq

2. Science College, Misan University , Misan , Iraq

3. Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University , Nassiriyah , Iraq

Abstract

Abstract This work studies the total gain of the InTlAsSb quantum dot structure, which is not studied earlier. Adding thallium to structures makes it emit at larger wavelengths. The nonlinear effect of the injected signal power is examined for three quaternary thallium structures: In0.85Tl0.15AsSb, In0.93Tl0.07AsSb and In0.97Tl0.03AsSb. The gain peak was increased by four times and the wavelength was shifted to longer one for the In0.97Tl0.03AsSb quantum dot (QD) structure. This quaternary QD structure extends the emission wavelength to more than 12 μm which is important in long-wavelength infrared applications. The nonlinear behavior of these QD structures is also addressed. It is shown that the structure In0.97Tl0.03AsSb has a deeper spectral hole burning which is adequate for nonlinear signal processing applications.

Publisher

Walter de Gruyter GmbH

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://www.degruyter.com/document/doi/10.1515/joc-2020-0083/pdf

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