Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier-Reference-Cited by-同舟云学术

Gain of TlBr/BrCl Quantum Dot Semiconductor Optical Amplifier

Published:2023-03-17 Issue: Volume:2023 Page:1-7
ISSN:2090-0155
Container-title:Journal of Electrical and Computer Engineering
language:en
Short-container-title:Journal of Electrical and Computer Engineering

Author:

Al-Nashy Baqer O.¹^ORCID,Al-Mosawi Buraq T. Sh.²^ORCID,Oleiwi Mushtaq Obaid³^ORCID,Al-Khursan Amin H.⁴^ORCID

Affiliation:

1. Department of Physics, College of Science, University of Misan, Amarah, Iraq

2. College of Education, University of Misan, Amarah, Iraq

3. Department of Physics, College of Education for Pure Science, University of Thi-Qar, Nasiriya, Iraq

4. Nasiriya Nanotechnology Research Laboratory (NNRL), College of Science, University of Thi-Qar, Nasiriya, Iraq

Abstract

This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at

800

and

3000 n m

. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications.

Publisher

Hindawi Limited

Subject

Electrical and Electronic Engineering,General Computer Science,Signal Processing

Link

http://downloads.hindawi.com/journals/jece/2023/1941232.pdf

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