Elastic Properties and Electronic Structure of WS2 under Pressure from First-principles Calculations

Author:

Li Li12,Zeng Zhao-Yi3,Liang Ting1,Tang Mei1,Cheng Yan1

Affiliation:

1. Institute of Atomic and Molecular Physics, College of Physical Science and Technology, Sichuan University, Chengdu 610064, China

2. Department of Physics, College of Computer, Civil Aviation Flight University of China, Guanghan 618307, China

3. College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 400047, China

Abstract

Abstract The influence of pressure on the elastic and mechanical properties of the hexagonal transition-metal dichalcogenide WS2 is investigated using the first-principles calculations. With the increase in pressure, the lattice parameters and the volume of WS2 decrease, which is exactly in agreement with the available experimental data and other calculated results. The elastic constants C ij , bulk modulus B, shear modulus G, Young’s modulus E, and Poisson’s ratio σ of WS2 also increase with pressure. At last, for the first time, the band gaps of energy, the partial density of states, and the total density of states under three different pressures are obtained and analysed. It is found that the band gap of WS2 decreases from 0.843 to 0 eV when the external pressure varies from 0 to 20 GPa, which implies that WS2 may transform from semiconductors to semimetal phase at a pressure about 20 GPa.

Funder

National Natural Science Foundation of China

Publisher

Walter de Gruyter GmbH

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics

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