Novel procedure for the identification of a starting point for the CMP
Author:
Trum Christian1, Sitzberger Sebastian1, Rascher Rolf1
Affiliation:
1. IPH , Technische Hochschule Deggendorf , Deggendorf , Germany
Abstract
Abstract
In the field of precision optics, more and more glass materials that are difficult to machine are being used because of their interesting optical properties. At the same time, the geometries are getting more demanding and the tolerances to be achieved are tighter. The establishment of an efficient process chain is therefore becoming an ever-greater challenge. Particularly in the field of CMP, knowledge of the machining properties of pads and slurries are required to design efficient processes. This knowledge has to be gained through time-consuming in-house tests, as the manufacturers of the consumables are usually only able to provide basic data. In addition, the boundary conditions under which the data were collected are often incomplete defined and thus not comparable. The novel methodical procedure presented here for the initial design of CMP processes is based on a standardized procedure for carrying out the tests. From the resulting database, a starting point for the design of own processes can be identified quickly and unerringly. This article describes the structure of the procedure as well as the necessary background. In addition, the visualization and the procedure for selecting start parameters are discussed using an example application.
Publisher
Walter de Gruyter GmbH
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. S. Hambücker, Technologie der Politur sphärischer Optiken mit Hilfe der Synchrospeed-Kinematik. Zugl.: Aachen, Techn. Hochsch., Diss., Aachen Shaker, 2001. 2. D. Wächter, Wirkweise des Poliermittelträgers beim Polieren optischer Gläser. Aachen, Apprimus Wissenschaftsverlag, 2018, [Online]. Available at: http://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1684254. 3. M. Bielmann, U. Mahajan, and R. K. Singh, “Effect of particle size during tungsten chemical mechanical polishing,” Electrochem. Solid State Lett., vol. 2, no. 8, p. 401, 1999, https://doi.org/10.1149/1.1390851. 4. H. S. Lee, H. D. Jeong, and D. A. Dornfeld, “Semi-empirical material removal rate distribution model for SiO2 chemical mechanical polishing (CMP) processes,” Precis. Eng., vol. 37, no. 2, pp. 483–490, 2013, https://doi.org/10.1016/j.precisioneng.2012.12.006. 5. Z. Zhang, W. Liu, and Z. Song, “Particle size and surfactant effects on chemical mechanical polishing of glass using silica-based slurry,” Appl. Opt., vol. 49, no. 28, pp. 5480–5485, 2010, https://doi.org/10.1364/ao.49.005480.
|
|