Understanding the contribution of energy and angular distribution in the morphology of thin films using Monte Carlo simulation

Author:

Bouazza Abdelkader,Settaouti Abderrahmane

Abstract

Abstract The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value E_{\rm max} , sputtering yield will be in maximum Y1_{\rm max} . Applying this E_{\rm max} and with variation in the angular distribution, we will obtain \theta_{\rm max} corresponding to the maximum of sputtering yield Y2_{\rm max} . These two values ( E_{\rm max} , \theta_{\rm max} ) give the maximum of atoms sputtered and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.

Publisher

Walter de Gruyter GmbH

Subject

Applied Mathematics,Statistics and Probability

Reference66 articles.

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3. Monte Carlo simulations of disorder in ZnSnN2\mathrm{N}_{2} and the effects on the electronic structure;Phys. Rev. Mater.,2017

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