Author:
Bouazza Abdelkader,Settaouti Abderrahmane
Abstract
Abstract
The energy and the angular distribution of atoms are considered like two parameters most influent in the optimization of the sputtering and subsequently on the deposit, resulting in films having the desired properties (homogeneity in thickness, composition identical to that of the evaporated material). Moreover, a great influence on the shape and quality of thin films is obtained. In this work, a simulation with a Monte Carlo (MC) method is used to calculate the sputtering yield for different energies and angular distributions of atoms of metals (Cu, Al and Ag) and semiconductors (Ge, Si and Te) bombarded by different gas particles (Ar, Xe and Ne). Our results showed that when arriving at a certain energy value
E_{\rm max}
, sputtering yield will be in maximum
Y1_{\rm max}
. Applying this
E_{\rm max}
and with variation in the angular distribution, we will obtain
\theta_{\rm max}
corresponding to the maximum of sputtering yield
Y2_{\rm max}
. These two values (
E_{\rm max}
,
\theta_{\rm max}
) give the maximum of atoms sputtered and as a result, the films will be uniform. The obtained results are in very high agreement with other works, which validates our calculations.
Subject
Applied Mathematics,Statistics and Probability
Reference66 articles.
1. Monte Carlo simulation approach to sputtering in multi-component targets;Jpn. J. Appl. Phys.,1985
2. Sputter deposition processes;Thin Film Processes II,1991
3. Monte Carlo simulations of disorder in ZnSnN2\mathrm{N}_{2} and the effects on the electronic structure;Phys. Rev. Mater.,2017
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