Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE-Reference-Cited by-同舟云学术

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Published:2016-12-01 Issue:4 Volume:34 Page:726-734
ISSN:2083-134X
Container-title:Materials Science-Poland
language:en
Short-container-title:

Author:

Gelczuk Łukasz¹,Dąbrowska-Szata Maria¹,Ściana Beata¹,Pucicki Damian¹,Radziewicz Damian¹,Kopalko Krzysztof²,Tłaczała Marek¹

Affiliation:

1. Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland

2. Institute of Physics, Polish Academy of Science, al. Lotnikow 32/46, 02-668 Warsaw, Poland

Abstract

Abstract Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

Publisher

Walter de Gruyter GmbH

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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