Non-Equilibrium Dislocation Dynamics in Semiconductor Crystals and Superlattices

Abstract

Abstract A model for semiconductor crystals and superlattices with dislocations proposed in a previous paper is used here to study the thermal, electrical and mechanical properties of these defective materials. The standard procedures of non-equilibrium thermodynamics with internal variables are applied to derive in the linear approximation constitutive equations as well as rate equations for the dislocation, charges and heat flux fields, containing coupled effects among the different fields. A new dislocation tensor is used to describe the geometry of the dislocation lines, because their relative orientation with respect to the superlattice interfaces is very relevant.