Monolithic integrated emitting-detecting configuration based on strained Ge microbridge
Author:
Qin Senbiao1, Sun Junqiang1ORCID, Jiang Jialin1, Zhang Yi1, Cheng Ming1, Yu Linfeng1, Wang Kang1, Kai Li1, Shi Haotian1, Huang Qiang1
Affiliation:
1. Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan , 430074 , Hubei , China
Abstract
Abstract
The strain technology is accelerating the progress on the CMOS compatible Ge-on-Si laser source. Here, we report a monolithically integrated microbridge-based emitting-detecting configuration, equipped with lateral p–i–n junctions, waveguide and gratings. The operating wavelength range of the emitting bridge and the detecting bridge are matched through the designed same dimensions of the two microbridges, as well as the strain. Strain-enhanced spontaneous emission and the effect of spectra red-shifting on low-loss transmission of on-chip light are discussed. Temperature dependence experiments reveal that in devices with highly strain-enhanced structure, the strain variation can offset the effect of electron thermalization, so that the performance of the device remains stable when temperature changes around room temperature.
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Reference30 articles.
1. M. L. Davenport, S. Skendzic, N. Volet, J. C. Hulme, M. J. R. Heck, and J. E. Bowers, “Heterogeneous silicon/III–V semiconductor optical amplifiers,” IEEE J. Sel. Top. Quant. Electron., vol. 22, no. 6, pp. 78–88, 2016, https://doi.org/10.1109/jstqe.2016.2593103. 2. D. Huang, M. A. Tran, J. Guo, et al.., “High-power sub-kHz linewidth lasers fully integrated on silicon,” Optica, vol. 6, no. 6, pp. 745–752, 2019, https://doi.org/10.1364/optica.6.000745. 3. M. A. Tran, D. Huang, J. Guo, T. Komljenovic, P. A. Morton, and J. E. Bowers, “Ring-resonator based widely-tunable narrow-linewidth Si/InP integrated lasers,” IEEE J. Sel. Top. Quant. Electron., vol. 26, no. 2, pp. 1–14, 2020, https://doi.org/10.1109/jstqe.2019.2935274. 4. J. Chrétien, N. Pauc, F. Armand Pilon, et al.., “GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain,” ACS Photonics, vol. 6, no. 10, pp. 2462–2469, 2019, https://doi.org/10.1021/acsphotonics.9b00712. 5. A. Elbaz, R. Arefin, E. Sakat, et al.., “Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region,” ACS Photonics, vol. 7, no. 10, pp. 2713–2722, 2020, https://doi.org/10.1021/acsphotonics.0c00708.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
|
|