Difference-frequency generation in optically poled silicon nitride waveguides
Author:
Sahin Ezgi1, Zabelich Boris1, Yakar Ozan1, Nitiss Edgars1, Liu Junqiu2, Wang Rui N.2, Kippenberg Tobias J.2, Brès Camille-Sophie1
Affiliation:
1. Ecole Polytechnique Fédérale de Lausanne , Photonic Systems Laboratory , 1015 Lausanne , Switzerland 2. Ecole Polytechnique Fédérale de Lausanne , Laboratory of Photonics and Quantum Measurements , 1015 Lausanne , Switzerland
Abstract
Abstract
Difference-frequency generation (DFG) is elemental for nonlinear parametric processes such as optical parametric oscillation and is instrumental for generating coherent light at long wavelengths, especially in the middle infrared. Second-order nonlinear frequency conversion processes like DFG require a second-order susceptibility χ
(2), which is absent in centrosymmetric materials, e.g. silicon-based platforms. All-optical poling is a versatile method for inducing an effective χ
(2) in centrosymmetric materials through periodic self-organization of charges. Such all-optically inscribed grating can compensate for the absence of the inherent second-order nonlinearity in integrated photonics platforms. Relying on this induced effective χ
(2) in stoichiometric silicon nitride (Si3N4) waveguides, second-order nonlinear frequency conversion processes, such as second-harmonic generation, were previously demonstrated. However up to now, DFG remained out of reach. Here, we report both near- and non-degenerate DFG in all-optically poled Si3N4 waveguides. Exploiting dispersion engineering, particularly rethinking how dispersion can be leveraged to satisfy multiple processes simultaneously, we unlock nonlinear frequency conversion near 2 μm relying on all-optical poling at telecommunication wavelengths. The experimental results are in excellent agreement with theoretically predicted behaviours, validating our approach and opening the way for the design of new types of integrated sources in silicon photonics.
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
Reference28 articles.
1. C. J. Krückel, A. Fülöp, Z. Ye, P. A. Andrekson, and V. Torres-Company, “Optical bandgap engineering in nonlinear silicon nitride waveguides,” Opt. Express, vol. 25, no. 13, pp. 770–776, 2017. https://doi.org/10.1364/oe.25.015370. 2. A. Gondarenko, J. S. Levy, and M. Lipson, “High confinement micron-scale silicon nitride high Q ring resonator,” Opt. Express, vol. 17, no. 14, p. 11366, 2009. https://doi.org/10.1364/oe.17.011366. 3. D. J. Moss, R. Morandotti, A. L. Gaeta, and M. Lipson, “New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics,” Nat. Photonics, vol. 7, pp. 597–607, 2013. https://doi.org/10.1038/nphoton.2013.183. 4. D. J. Blumenthal, R. Heideman, D. Geuzebroek, A. Leinse, and C. Roeloffzen, “Silicon nitride in silicon photonics,” Proc. IEEE, vol. 106, no. 12, pp. 2209–2231, 2018. https://doi.org/10.1109/jproc.2018.2861576. 5. J. Liu, G. Huang, R. N. Wang, et al.., “High-yield wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits,” Nat. Commun., vol. 12, pp. 1–9, 2021. https://doi.org/10.1038/s41467-021-21973-z.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
|
|